131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 页数：12 Pages

SONYSony Corporation

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131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 页数：12 Pages

SONYSony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 页数：12 Pages

SONYSony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 页数：12 Pages

SONYSony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 页数：12 Pages

SONYSony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 页数：12 Pages

SONYSony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 页数：12 Pages

SONYSony Corporation

索尼

131072-word x 8-bit High Speed CMOS Static RAM

Sony

索尼

131072-word × 8-bit High Speed CMOS Static RAM

Description\nThe CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits.\nA polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package line-u • Fast access time:\nCXK581000ATM/AYM/AM/AP (Access time)\n          -55LL/55SL 55ns (Max.)\n          -70LL/70SL 70ns (Max.)\n          -10LL/10SL 100ns (Max.)\n• Low standby current:\nCXK581000ATM/AYM/AM/AP\n          -55LL/70LL/10LL 20µA (Max.)\n          -55SL/70SL/10SL 12µA (Max.)\n• Low data r;

Sony

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