| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
ULTRA-SMALLPACKAGESLIMPOLARIZEDRELAY FEATURES •Compactslimbodysavesspace Thankstothesmallsurfaceareaof5.7mm×10.6mm.224inch×.417inchandlowheightof9.0mm.354inch,thepackagingdensitycanbeincreasedtoallowformuchsmallerdesigns. •Outstandingsurgeresistance. Surgewithstandbetweenopencontac | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
HighSensitivity,with100mWnominaloperatingpower,inacompactandspacesavingcase FEATURES 1.Compactslimbodysavesspace Thankstothesmallsurfaceareaof5.7mm×10.6mm.224inch×.417inchandlowheightof9.0mm.354inch,thepackagingdensitycanbeincreasedtoallowformuchsmallerdesigns. 2.Highsensitivitysinglesidestable type(Nominaloperatin | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
ULTRA-SMALLPACKAGESLIMPOLARIZEDRELAY FEATURES •Compactslimbodysavesspace Thankstothesmallsurfaceareaof5.7mm×10.6mm.224inch×.417inchandlowheightof9.0mm.354inch,thepackagingdensitycanbeincreasedtoallowformuchsmallerdesigns. •Outstandingsurgeresistance. Surgewithstandbetweenopencontac | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
ULTRA-SMALLPACKAGEFLATPOLARIZEDRELAY | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
Highcapacity2Amp,FlatandCompactpackageTelephoneswitchboard FEATURES 1.Highcapacity:2A 2.CompactflatbodysavesspaceWithasmallfootprintof 10.6mm(L)×7.2mm(W).417inch(L)×.283inch(W)forspacesavings, italsohasaveryshortheightof5.2mm.205inch.(StandardPCboardtype.) 3.Highsensitivitysinglesidestabletyp | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
HIGHSENSITIVITYRELAYWITHGUARANTEEDLOWLEVELSWITCHINGCAPACITY | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
CapacitiveSensorSwitchControlIC | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
HighVoltageInputPrecision,LowNoiseFGA??VoltageReferences | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
HighVoltageInputPrecision,LowNoiseFGA??VoltageReferences | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
HighVoltageInputPrecision,LowNoiseFGA™VoltageReferences Features •OutputVoltages........1.250V,2.500V,4.096V,5.000V •InitialAccuracy..............±0.5mV,±1.0mV,±2.0mV •InputVoltageRange...................3.5Vto16.5V •OutputVoltageNoise.........4.5μVP-P(0.1Hzto10Hz) •SupplyCurr | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Precision,LowNoiseFGA??VoltageReferences TheISL21009FGA™voltagereferencesareextremelylowpower,highprecision,andlownoisevoltagereferencesfabricatedonIntersil’sproprietaryFloatingGateAnalogtechnology.TheISL21009featuresverylownoise(4µVP-Pfor0.1Hzto10Hz),lowoperatingcurrent(180µA,Max),and3ppm/°Coft | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
Providinghigh-performancesolutionsforeverylinkinthesignalchain | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
Providinghigh-performancesolutionsforeverylinkinthesignalchain | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
Providinghigh-performancesolutionsforeverylinkinthesignalchain | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
HighVoltageInputPrecision,LowNoiseFGA™VoltageReferences Features •SpecificationsperDSCCVIDV62/08629 •FullMil-TempElectricalPerformancefrom-55°Cto+125°C •ControlledBaselinewithOneWaferFabricationSiteand OneAssembly/TestSite •FullHomogeneousLotProcessinginWaferFab •NoCombinationofWaferFabricationLotsinAssembly | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighVoltageInputPrecision,LowNoiseFGA??VoltageReferences TheISL21009MEPFGA™voltagereferencesareextremelylowpower,highprecision,andlownoisevoltagereferencesfabricatedonIntersil’sproprietaryFloatingGateAnalogtechnology.TheISL21009MEPfeaturesverylownoise(4.5µVP-Pfor0.1Hzto10Hz),lowoperatingcurrent(180µA,Max),and3ppm | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
NPNmicrowavepowertransistor DESCRIPTION NPNsiliconplanarepitaxialmicrowavepowertransistorinaSOT440Ametalceramicflangepackagewiththeemitterconnectedtotheflange. FEATURES •Diffusedemitterballastingresistors •Self-alignedprocessentirelyionimplantedandgoldsandwichmetallization •optimumtemp | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNmicrowavepowertransistor DESCRIPTION NPNsiliconplanarepitaxialmicrowavepowertransistorinaSOT440Ametalceramicflangepackagewiththeemitterconnectedtotheflange. FEATURES •Diffusedemitterballastingresistors •Self-alignedprocessentirelyionimplantedandgoldsandwichmetallization •optimumtemp | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
GaAsVaractorDiodesAbruptJunction Description Microsemi’sGaAsabruptjunctionvaractorsarefabricatedfromepitaxiallayersgrownatMicrosemiusingChemicalVaporDeposition.ThelayersareprocessedusingproprietarytechniquesresultinginahighQfactorandveryrepeatabletuningcurves.Thediodesareavailableinavarie | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SONY |
2339+ |
DIP |
5650 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
SONY |
01+ |
QFP64 |
11295 |
询价 | |||
SONY |
23+ |
QFP |
980 |
全新原装,真实库存 |
询价 | ||
SONY |
16+ |
QFP |
4000 |
进口原装现货/价格优势! |
询价 | ||
SONY |
2022 |
QFP64 |
2058 |
原厂原装正品,价格超越代理 |
询价 | ||
SONY |
23+ |
QFP-64P |
46500 |
询价 | |||
SONY |
2017+ |
QFP-64 |
32568 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
SONY |
22+ |
QFP=64 |
5000 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 | ||
SONY |
17+ |
QFP |
9800 |
只做全新进口原装,现货库存 |
询价 | ||
SONY |
2001 |
QFP64P |
56000 |
原装现货海量库存欢迎咨询 |
询价 |
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