High Efficiency, Class A, 1 Watt Amplifier 10 to 1000 MHz

文件：109.28 Kbytes 页数：4 Pages

TELEDYNE

华特力科

High Efficiency, Class A, 1 Watt Amplifier 10 to 1000 MHz

Teledyne RF&Microwave

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件：36.42 Kbytes 页数：2 Pages

POLYFET

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

文件：1.60012 Mbytes 页数：12 Pages

TECCOR

Versatile telephone transmission circuit with dialler interface

文件：154.29 Kbytes 页数：28 Pages

PHI

PHI