CTLT853-M833分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF中文资料

CTLT853-M833属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由美国中央半导体制造生产的CTLT853-M833晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CTLT853-M833 is a high performance 6.0A High Current NPN Transistor designed for applications where small size and operational efficiency are prime requirements. With a maximum power dissipation of 4.5W, and a very small package footprint, this device is 80 smaller than a comparible SOT-223 device. This leadless package design has a watts per unit area at least twice that of equivalent package devices.

MARKING CODE: CHA3

• PNP Complement: CTLT953-M833

FEATURES:

• High Voltage (200V)

• High Thermal Efficiency

• High Current (IC=6.0A)

• 3 x 3mm TLM™ case

• Low VCE(SAT) = 340mV MAX @ 5.0A