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CSD97396Q4MG4.B中文资料德州仪器数据手册PDF规格书

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厂商型号

CSD97396Q4MG4.B

功能描述

CSD97396Q4M Synchronous Buck NexFET™ Power Stage

文件大小

556.52 Kbytes

页面数量

20

生产厂商

TI

中文名称

德州仪器

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-12-21 9:38:00

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CSD97396Q4MG4.B规格书详情

1 Features

1• Over 93% System Efficiency at 15 A

• Max Rated Continuous Current 30 A, Peak 65 A

• High Frequency Operation (up to 2 MHz)

• High Density – SON 3.5 mm × 4.5 mm Footprint

• Ultra-Low Inductance Package

• System-Optimized PCB Footprint

• Ultra-Low Quiescent (ULQ) Current Mode

• 3.3 V and 5 V PWM Signal Compatible

• Diode Emulation Mode With FCCM

• Input Voltages up to 24 V

• Tri-State PWM Input

• Integrated Bootstrap Diode

• Shoot-Through Protection

• RoHS Compliant – Lead Free Terminal Plating

• Halogen Free

2 Applications

• Ultrabook/Notebook DC/DC Converters

• Multiphase Vcore and DDR Solutions

• Point-of-Load Synchronous Buck in Networking,

Telecom, and Computing Systems

3 Description

The CSD97396Q4M NexFET™ Power Stage is a

highly optimized design for use in a high-power, high-

density synchronous buck converter. This product

integrates the driver IC and NexFET technology to

complete the power stage switching function. The driver IC has a built-in selectable diode emulation

function that enables DCM operation to improve light

load efficiency. In addition, the driver IC supports

ULQ mode that enables connected standby for Windows® 8. With the PWM input in tri-state,

quiescent current is reduced to 130 μA, with

immediate response. When SKIP# is held at tri-state,

the current is reduced to 8 μA (typically 20 μs is

required to resume switching). This combination

produces a high current, high efficiency, and high

speed switching device in a small 3.5 × 4.5 mm

outline package. In addition, the PCB footprint is

optimized to help reduce design time and simplify the

completion of the overall system design.

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