丝印：95379M；Package：VSON-CLIP；CSD95379Q3M Synchronous Buck NexFET™ Power Stage

1 Features 1• 92.5% System Efficiency at 12 A • Ultra-Low Power Loss of 1.8 W at 12 A • Max Rated Continuous Current of 20 A and Peak Current of 45 A • High-Frequency Operation (up to 2 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Ultra-Low Inductance Package • System Optimized

文件：843.89 Kbytes 页数：21 Pages

TI

德州仪器

CSD95379Q3M Synchronous Buck NexFET™ Power Stage

1 Features 1• 92.5% System Efficiency at 12 A • Ultra-Low Power Loss of 1.8 W at 12 A • Max Rated Continuous Current of 20 A and Peak Current of 45 A • High-Frequency Operation (up to 2 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Ultra-Low Inductance Package • System Optimized

文件：847.43 Kbytes 页数：22 Pages

TI

德州仪器

CSD95379Q3M Synchronous Buck NexFET Power Stage

文件：1.18709 Mbytes 页数：22 Pages

TI

德州仪器

CSD95379Q3M Synchronous Buck NexFET™ Power Stage

1 Features 1• 92.5% System Efficiency at 12 A • Ultra-Low Power Loss of 1.8 W at 12 A • Max Rated Continuous Current of 20 A and Peak Current of 45 A • High-Frequency Operation (up to 2 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Ultra-Low Inductance Package • System Optimized

文件：847.43 Kbytes 页数：22 Pages

TI

德州仪器

CSD95379Q3M Synchronous Buck NexFET™ Power Stage

1 Features 1• 92.5% System Efficiency at 12 A • Ultra-Low Power Loss of 1.8 W at 12 A • Max Rated Continuous Current of 20 A and Peak Current of 45 A • High-Frequency Operation (up to 2 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Ultra-Low Inductance Package • System Optimized

文件：843.89 Kbytes 页数：21 Pages

TI

德州仪器