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首页>CSD19538Q3A>芯片详情
CSD19538Q3A_TI/德州仪器_CSD19538Q3A 100-V N-Channel NexFET™ Power MOSFET毅创辉一部
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产品属性
- 类型
描述
- 型号
:CSD19538Q3A
- Configuration
:Single
- Rds(on) max at VGS=10 V (mOhms)
:61
- IDM - pulsed drain current (Max) (A)
:36
- QG typ (nC)
:4.3
- QGD typ (nC)
:0.8
- Package (mm)
:SON3x3
- VGS (V)
:20
- VGSTH typ (V)
:3.2
- ID - silicon limited at Tc=25degC (A)
:13.7
- ID - package limited (A)
:15
- Logic level
:No
供应商
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