丝印：CSD19537；Package：null；CSD19537Q3 100-V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead free terminal plating • RoHS compliant • Halogen free • SON 3.3-mm × 3.3-mm plastic package 2 Applications • Primary Side Isolated Converters • Motor Control 3 Description This 100-V, 12.1-mΩ, SON 3

文件：955.67 Kbytes 页数：12 Pages

TI

德州仪器

CSD19537Q3 100-V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead free terminal plating • RoHS compliant • Halogen free • SON 3.3-mm × 3.3-mm plastic package 2 Applications • Primary Side Isolated Converters • Motor Control 3 Description This 100-V, 12.1-mΩ, SON 3

文件：955.67 Kbytes 页数：12 Pages

TI

德州仪器

100V N-Channel NexFET Power MOSFET

文件：510.46 Kbytes 页数：13 Pages

TI

德州仪器

CSD19537Q3 100-V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead free terminal plating • RoHS compliant • Halogen free • SON 3.3-mm × 3.3-mm plastic package 2 Applications • Primary Side Isolated Converters • Motor Control 3 Description This 100-V, 12.1-mΩ, SON 3

文件：955.67 Kbytes 页数：12 Pages

TI

德州仪器