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首页>CSD19537Q3>详情
CSD19537Q3_TI/德州仪器_100V N-Channel NexFET Power MOSFET能创芯电子
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产品属性
- 类型
描述
- 型号
:CSD19537Q3
- Configuration
:Single
- Rds(on) max at VGS=10 V (mOhms)
:14.5
- IDM - pulsed drain current (Max) (A)
:219
- QG typ (nC)
:16
- QGD typ (nC)
:2.9
- Package (mm)
:SON3x3
- VGS (V)
:20
- VGSTH typ (V)
:3
- ID - silicon limited at Tc=25degC (A)
:53
- ID - package limited (A)
:50
- Logic level
:No
供应商
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