丝印：CSD18536KTT；Package：TO-263；CSD18536KTT 60 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 60-V, 1.3-mΩ, D2PAK (TO-263) NexF

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TI

德州仪器

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：321.84 Kbytes 页数：2 Pages

ISC

无锡固电

CSD18536KCS 60 V N-Channel NexFET Power MOSFET

文件：454.75 Kbytes 页数：11 Pages

TI

德州仪器

CSD18536KCS 60V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 60V, 1.3mΩ, TO-220 NexFET™ power

文件：899.43 Kbytes 页数：13 Pages

TI

德州仪器