丝印：CSD18535KTT；Package：DDPAK/TO-263；CSD18535KTT 60 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 60-V, 1.6-mΩ, D2PAK (TO-263) NexF

文件：439.85 Kbytes 页数：12 Pages

TI

德州仪器

60 V N-Channel NexFET Power MOSFET

文件：417.82 Kbytes 页数：13 Pages

TI

德州仪器

丝印：CSD18535KTT；Package：DDPAK/TO-263；CSD18535KTT 60 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 60-V, 1.6-mΩ, D2PAK (TO-263) NexF

文件：439.85 Kbytes 页数：12 Pages

TI

德州仪器

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：322.03 Kbytes 页数：2 Pages

ISC

无锡固电

CSD18535KCS 60 V N-Channel NexFET Power MOSFET

文件：338.7 Kbytes 页数：11 Pages

TI

德州仪器

CSD18535KCS 60V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-Free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 60V, 1.6mΩ, TO-220 NexFET™ power

文件：889.09 Kbytes 页数：13 Pages

TI

德州仪器