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CSD17381F4中文资料德州仪器数据手册PDF规格书
CSD17381F4规格书详情
1 Features
• Ultra-low on-resistance
• Ultra-low Qg and Qgd
• Low threshold voltage
• Ultra-small footprint (0402 case size)
– 1.0 mm × 0.6 mm
• Ultra-low profile
– 0.36 mm height
• Integrated ESD protection diode
– Rated >4 kV HBM
– Rated >2 kV CDM
• Lead and halogen free
• RoHS compliant
2 Applications
• Optimized for load switch applications
• Optimized for general purpose switching
applications
• Single-cell battery applications
• Handheld and mobile applications
3 Description
This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET
technology is designed and optimized to minimize the
footprint in many handheld and mobile applications.
This technology is capable of replacing standard
small signal MOSFETs while providing at least a 60%
reduction in footprint size.
产品属性
- 型号：
CSD17381F4
- 功能描述：
MOSFET N-CH NexFET Pwr MOSFET
- RoHS：
否
- 制造商：
Texas Instruments
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
30 V
- 闸/源击穿电压：
12 V
- 漏极连续电流：
3.1 A 电阻汲极/源极
- RDS（导通）：
160 mOhms
- 配置：
Single
- 最大工作温度：
+ 150 C
- 安装风格：
SMD/SMT
- 封装/箱体：
SMD-3
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
3602 |
只做原装正品,卖元器件不赚钱交个朋友 |
询价 | ||||
TI |
21+ |
10000 |
原装公司现货 |
询价 | |||
TI |
22+ |
QFN |
8096 |
仓库现货,终端可送样品 |
询价 | ||
TI/德州仪器 |
24+ |
65200 |
询价 | ||||
TI/德州仪器 |
24+ |
DFN |
60000 |
全新原装现货 |
询价 | ||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
询价 | |||
TI |
23+ |
50000 |
全新原装正品现货,支持订货 |
询价 | |||
TI/德州仪器 |
21+ |
NA |
5000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
TI(德州仪器) |
2405+ |
PICOSTAR-3 |
50000 |
只做原装优势现货库存,渠道可追溯 |
询价 | ||
TI/德州仪器 |
25+ |
PICOSTA |
10000 |
全新原装现货库存 |
询价 |
