CSD17381F4 30-V N-Channel FemtoFET™ MOSFET

1 Features • Ultra-low on-resistance • Ultra-low Qg and Qgd • Low threshold voltage • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Ultra-low profile – 0.36 mm height • Integrated ESD protection diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and halogen free • RoHS compl

文件：937.48 Kbytes 页数：13 Pages

TI

德州仪器

CSD17381F4 30-V N-Channel FemtoFET™ MOSFET

1 Features • Ultra-low on-resistance • Ultra-low Qg and Qgd • Low threshold voltage • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Ultra-low profile – 0.36 mm height • Integrated ESD protection diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and halogen free • RoHS compl

文件：937.48 Kbytes 页数：13 Pages

TI

德州仪器

30 V N-Channel FemtoFET MOSFET

文件：602.06 Kbytes 页数：13 Pages

TI

德州仪器

CSD17381F4 30-V N-Channel FemtoFET™ MOSFET

1 Features • Ultra-low on-resistance • Ultra-low Qg and Qgd • Low threshold voltage • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Ultra-low profile – 0.36 mm height • Integrated ESD protection diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and halogen free • RoHS compl

文件：937.48 Kbytes 页数：13 Pages

TI

德州仪器