CSD17381F4T.B中文资料德州仪器数据手册PDF规格书

1 Features

• Ultra-low on-resistance

• Ultra-low Qg and Qgd

• Low threshold voltage

• Ultra-small footprint (0402 case size)

– 1.0 mm × 0.6 mm

• Ultra-low profile

– 0.36 mm height

• Integrated ESD protection diode

– Rated >4 kV HBM

– Rated >2 kV CDM

• Lead and halogen free

• RoHS compliant

2 Applications

• Optimized for load switch applications

• Optimized for general purpose switching

applications

• Single-cell battery applications

• Handheld and mobile applications

3 Description

This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET

technology is designed and optimized to minimize the

footprint in many handheld and mobile applications.

This technology is capable of replacing standard

small signal MOSFETs while providing at least a 60%

reduction in footprint size.