MCH4009

UHFtoXBandLow-NoiseAmplifierandOSCApplications

MCH4009

RFTransistor3.5V,40mA,fT=25GHz,NPNSingleMCPH4

RFTransistor 3.5V,40mA,fT=25GHz,NPNSingleMCPH4 Features •Low-noiseuse:NF=1.1dBtyp(f=2GHz) •Highcut-offfrequency:fT=25GHztyp(VCE=3V) •Lowoperatingvoltage •Highgain:|S21e|2=17dBtyp(f=2GHz) •Halogenfreecompliance

MCH4009-TL-H

RFTransistor3.5V,40mA,fT=25GHz,NPNSingleMCPH4

RFTransistor 3.5V,40mA,fT=25GHz,NPNSingleMCPH4 Features •Low-noiseuse:NF=1.1dBtyp(f=2GHz) •Highcut-offfrequency:fT=25GHztyp(VCE=3V) •Lowoperatingvoltage •Highgain:|S21e|2=17dBtyp(f=2GHz) •Halogenfreecompliance

MCH4009-TL-H

RFTransistor3.5V,40mA,fT=25GHz,NPNSingleMCPH4

RFTransistor 3.5V,40mA,fT=25GHz,NPNSingleMCPH4 Features •Low-noiseuse:NF=1.1dBtyp(f=2GHz) •Highcut-offfrequency:fT=25GHztyp(VCE=3V) •Lowoperatingvoltage •Highgain:|S21e|2=17dBtyp(f=2GHz) •Halogenfreecompliance

MP4009

HighPowerSwitchingApplicationsHammerDrive,PulseMotorDriveInductiveLoadSwitching

MP4009

SiliconPNPTripleDiffusedType(FourDarlingtonPowerTransistorsinOne)

HighPowerSwitchingApplications HammerDrive,PulseMotorDrive InductiveLoadSwitching •Smallpackagebyfullmolding(SIP10pins) •Highcollectorpowerdissipation(4-deviceoperation) :PT=4W(Ta=25°C) •Highcollectorcurrent:IC(DC)=−5A(max) •Hig

MS4009F

40WMedicalOpenFramePowerSupply

NCE4009S

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE4009Susesadvancedtrenchtechnologytoprovide excellentRDS(ON)andlowgatecharge.Thecomplementary MOSFETsmaybeusedtoformalevelshiftedhighside switch,andforahostofotherapplications. GeneralFeatures ●N-Channel VDS=40V,ID=9A RDS(ON)

NTE4009

COMPLEMENTARYMETALOXIDESILICON

OP4009B

672.163MHzOpticalTimingClock