CS3410 B4数据手册CRMICRO中文资料规格书

描述 Description

CS3410 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.

特性 Features

• Fast Switching
• Low ON Resistance(Rdson≤0.1Ω)
• Low Gate Charge (Typical Data:20nC)
• Low Reverse transfer capacitances(Typical:100PF)
• 100% Single Pulse avalanche energy Test

应用 Application

• Circuit of switching DC/DC converters and DC motor control.