N-Channel Power MOSFET

CS3410 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher • Fast Switching\r\n• Low ON Resistance(Rdson≤0.1Ω)\r\n• Low Gate Charge (Typical Data:20nC)\r\n• Low Reverse transfer capacitances(Typical:100PF)\r\n• 100% Single Pulse avalanche energy Test;

CRMICRO

华润微电子

SMD

CIRRUS

凌云逻辑

上传：深圳市兴联达电子有限公司(原兴达电子)

IGBT模块

科瑞半导体/Corisemi

上传：深圳市光格集成电路有限公司

IGBT模块

科瑞半导体/Corisemi

上传：深圳市光格集成电路有限公司

SOP-8

CRM/华润微

上传：深圳市共奕科技有限公司