KTC3199

TO-92SPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighDCCurrentGain ●ComplementarytoKTA1267

KTC3199

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION SWITCHINGAPPLICATION. FEATURES •HighDCCurrentGain:hFE=70~700. •ExcellenthFELinearity :hFE(0.1mA)/hFE(2mA)=0.95(Typ.). •LowNoise:NF=1dB(Typ.),10dB(Max.). •ComplementarytoKTA1267.

KTC3199

SiliconNPNtransistorinaTO-92PlasticPackage

Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features HighDCcurrentgain,excellenthFElinearity,lownoise,complementarytoKTA1267. Applications Generalamplifierandswitchingapplication.

KTC3199

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:400mW(Tamb=25℃) Collectorcurrent ICM:150mA Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

KTC3199-BL

NPNGeneralPurposeApplication

Features •HighDCCurrentGain:hFE=70~700 •ExcellenthFELinearity:hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) •LowNoise:NF=1.0dB(Typ.),10dB(Max.) •ComplementarytoKTA1267 •Marking:C3199 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RoHSComp

KTC3199-BL

NPNGeneralPurposeApplication

KTC3199-GR

NPNGeneralPurposeApplication

KTC3199-GR

NPNGeneralPurposeApplication

Features •HighDCCurrentGain:hFE=70~700 •ExcellenthFELinearity:hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) •LowNoise:NF=1.0dB(Typ.),10dB(Max.) •ComplementarytoKTA1267 •Marking:C3199 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RoHSComp

KTC3199L

EPITAXIALPLANARNPNTRANSISTOR(LOWNOISEAUDIOAMPLIFIER)

LOWNOISEAUDIOAMPLIFIERAPPLICATION. FEATURES •HighDCCurrentGain:hFE=70ᴕ700. •ExcellenthFELinearity :hFE(0.1mA)/hFE(2mA)=0.95(Typ.). •LowNoise:NF=0.2dB(Typ.),3dB(Max.). •ComplementarytoKTA1267L.

KTC3199M

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features HighDCcurrentgain,excellenthFElinearity,lownoise. Applications Generalamplifierandswitchingapplication.