RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. • Typical Single--Ca

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恩XP

Standard Thick Film Chip Resistors

Stability at different environmental conditions ΔR/R ≤ 1 % (1000 h rated power at 70 °C)\n2 mm pitch packaging option for 0603 size\nAEC-Q200 qualified;

Vishay

威世

Package：1210（3225 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电阻器 片式电阻器 - 表面贴装 描述：RES SMD 10 OHM 1% 1/2W 1210

Vishay Dale

Package：1210（3225 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电阻器 片式电阻器 - 表面贴装 描述：RES SMD 10 OHM 1% 1/2W 1210

Vishay Dale

Pulse Proof, High Power Thick Film Chip Resistors

Excellent pulse load capability\nEnhanced power rating\nDouble side printed resistor element;

Vishay

威世

Package：1210（3225 公制）；包装：卷带（TR）剪切带（CT） 类别：电阻器 片式电阻器 - 表面贴装 描述：RES SMD 10 OHM 1% 3/4W 1210

Vishay Dale