CRCW121010R0FKEA电阻器的片式电阻器-表面贴装规格书PDF中文资料

厂商型号	CRCW121010R0FKEA
参数属性	CRCW121010R0FKEA 封装/外壳为1210（3225 公制）；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为电阻器的片式电阻器-表面贴装；产品描述：RES SMD 10 OHM 1% 1/2W 1210
功能描述	RF Power Field Effect Transistors
封装外壳	1210（3225 公制）
文件大小	807.26 Kbytes
页面数量	15 页
生产厂商	未知制造商
企业简称	恩XP
中文名称	未知制造商
数据手册	下载地址一下载地址二
更新时间	2025-6-27 22:59:00
人工找货	CRCW121010R0FKEA价格和库存，欢迎联系客服免费人工找货

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to

2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

used in Class AB and Class C for PCN--PCS/cellular radio and WLL

applications.

• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =

1100 mA, Pout = 33 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping,

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01

Probability on CCDF.

Power Gain 17.3 dB

Drain Efficiency 32.5

Device Output Signal PAR 6.1 dB @ 0.01 Probability on CCDF

ACPR @ 5 MHz Offset --38 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 110 Watts CW

Peak Tuned Output Power

• Pout @ 1 dB Compression Point ≃ 110 Watts CW

Features

• 100 PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

• Designed for Digital Predistortion Error Correction Systems

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.