Single-channel isolated gate driver IC with adjustable DESAT and soft-off

Features • 600 V, 650 V, 900 V, and 1200 V IGBTs, SiC and Si MOSFETs • 40 V absolute maximum output supply voltage • ±3 A, ±6 A, and ±9 A typical sinking and sourcing peak output current • Separate source and sink outputs for hard switching and with active Miller clamp/clamp driver • Adjustme

文件：2.30184 Mbytes 页数：20 Pages

Infineon

英飞凌

RF LDMOS Wideband Integrated Power Amplifiers

The A2I09VD030N wideband integrated circuit is designed with on−chip matching that makes it usable from 575 to 1300 MHz. This multi−stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats. Features • On−chip matching (50 ohm input, D

文件：491.92 Kbytes 页数：23 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifiers

文件：1.14836 Mbytes 页数：22 Pages

恩XP

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

文件：424.62 Kbytes 页数：12 Pages

恩XP

Standard Thick Film Chip Resistors

文件：109.32 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Standard Thick Film Chip Resistors

文件：109.32 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Standard Thick Film Chip Resistors

文件：109.32 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Standard Thick Film Chip Resistors

文件：109.32 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Standard Thick Film Chip Resistors

文件：109.32 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Standard Thick Film Chip Resistors

文件：109.32 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司