RF LDMOS Wideband Integrated Power Amplifiers

The A2I09VD030N wideband integrated circuit is designed with on−chip matching that makes it usable from 575 to 1300 MHz. This multi−stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats. Features • On−chip matching (50 ohm input, D

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恩XP

Standard Thick Film Chip Resistors

Stability at different environmental conditions ΔR/R ≤ 1 % (1000 h rated power at 70 °C)\n2 mm pitch packaging option for 0603 size\nAEC-Q200 qualified;

Vishay

威世科技

Package：1206（3216 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电阻器 片式电阻器 - 表面贴装 描述：RES SMD 1.5K OHM 1% 1/4W 1206

Vishay Dale

Package：1206（3216 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电阻器 片式电阻器 - 表面贴装 描述：RES SMD 1.5K OHM 1% 1/4W 1206

Vishay Dale

Pulse Proof, High Power Thick Film Chip Resistors

Excellent pulse load capability\nEnhanced power rating\nDouble side printed resistor element;

Vishay

威世科技

Package：1206（3216 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电阻器 片式电阻器 - 表面贴装 描述：RES 1.5K OHM 1% 1/4W 1206

Vishay Dale