丝印：CR5；Package：SC70；SN74LVC1G79 Single Positive-Edge-Triggered D-Type Flip-Flop

1 Features 1• Available in the Texas Instruments NanoFree™ Package • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Supports 5-V VCC Operati

文件：1.04248 Mbytes 页数：32 Pages

TI

德州仪器

丝印：CR5；Package：SC70；SN74LVC1G79 Single Positive-Edge-Triggered D-Type Flip-Flop

1 Features 1• Available in the Texas Instruments NanoFree™ Package • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Supports 5-V VCC Operati

文件：1.04248 Mbytes 页数：32 Pages

TI

德州仪器

丝印：CR5；Package：SC70；SN74LVC1G79 Single Positive-Edge-Triggered D-Type Flip-Flop

1 Features 1• Available in the Texas Instruments NanoFree™ Package • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Supports 5-V VCC Operati

文件：1.04248 Mbytes 页数：32 Pages

TI

德州仪器

丝印：CR5；Package：SC70；SN74LVC1G79 Single Positive-Edge-Triggered D-Type Flip-Flop

1 Features 1• Available in the Texas Instruments NanoFree™ Package • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Supports 5-V VCC Operati

文件：1.04248 Mbytes 页数：32 Pages

TI

德州仪器

丝印：CR572；Package：TO-252；NPN 5.0A 30V Middle Power Transistor

Features 1) Suitable for Middle Power Driver. 2) Complementary PNP Types : 2SAR572D FHG. 3) Low VCE(sat) 　　VCE(sat)=400mV(Max.). 　　(IC/IB=2A/100mA) Application LOW FREQUENCY AMPLIFIER

文件：1.44877 Mbytes 页数：8 Pages

ROHM

罗姆

丝印：CR573；Package：TO-252；NPN 3.0A 50V Middle Power Transistor

Features 1) Suitable for Middle Power Driver. 2) Complementary PNP Types : 2SAR573D FHG. 3) Low VCE(sat) 　　VCE(sat)=350mV(Max.). 　　(IC/IB=1A/50mA) Application LOW FREQUENCY AMPLIFIER

文件：1.45063 Mbytes 页数：8 Pages

ROHM

罗姆

丝印：CR586；Package：TO-252；NPN 5.0A 80V Middle Power Transistor

文件：1.51325 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：CR586；Package：TO-263AB；NPN 5.0A 80V Power Transistor

文件：1.5513 Mbytes 页数：10 Pages

ROHM

罗姆

丝印：CR5AM；Package：TO-252；Silicon Bidirectional Thyristors

文件：353.55 Kbytes 页数：3 Pages

KEXIN

科信电子

Measurement & Control System

Design Features • Stand-alone unit off ering high performance and an environmentally rugged design • Maximum throughput of 2k to 5k measurements per second (confi guration dependant) • Powerful instruction set that supports measurement of most sensor types, on-board processing, data reduction,

文件：617.92 Kbytes 页数：8 Pages

CAMPBELL