丝印：CQ；Package：SOT-346；Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

文件：73.77 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：CQ；Package：SOT-346；Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

文件：78.81 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：CQ；Package：U-DFN2020-6；1.5MHZ, 1A STEP-DOWN DC-DC BUCK CONVERTER

Features - Output Current: Up to 1A - Output Voltage: 0.6V to VIN - Input Voltage: 2.5V to 5.5V - 0.6V Reference Voltage with ±2 Precision - 40μA (typ) No Load Quiescent Current - Shutdown Current:

文件：1.09572 Mbytes 页数：14 Pages

DIODES

美台半导体

丝印：CQ；Package：SOD123；Single Zener diodes in a SOD123 package

1.1 General description General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits • Total power dissipation: ≤ 590 mW • Wide working voltage range: nominal 2.4 V to 75 V (E24 range) • Small plastic package suitable for surface-mo

文件：198.54 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：CQ；Package：SOD123；Voltage regulator diodes

1. General description General-purpose Zener diodes in an SOD123 small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 590 mW • Two tolerance series: ±2 and approximately ±5 • Wide working voltage range: nominal 2.4 V to 7

文件：314.3 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：CQ；Package：SOT-23；Medium Power Transistor NPN silicon

Medium Power Transistor NPN silicon FEATURE ● Epitaxial planar type ● Complementary to FTA1036K

文件：67.81 Kbytes 页数：4 Pages

FS

丝印：CQ；Package：UQFN10；Current-Shunt Monitors, Voltage Output, Bidirectional Zero-Drift, Low- or High-Side Current Sensing

The NCS210R, NCS211R, NCS213R and NCS214R are voltage output, current shunt monitors (also called current sense amplifiers) which can measure voltage across shunts at common−mode voltages from −0.3 V to 26 V, independent of supply voltage. The low offset of the zero−drift architecture enables

文件：743.53 Kbytes 页数：18 Pages

ONSEMI

安森美半导体

丝印：CQ；Package：UQFN10；Current-Shunt Monitors, Voltage Output, Bidirectional, Zero-Drift, Low- or High-Side Current Sensing

The NCS210R, NCS211R, NCS213R and NCS214R are voltage output, current shunt monitors (also called current sense amplifiers) which can measure voltage across shunts at common−mode voltages from −0.3 V to 26 V, independent of supply voltage. The low offset of the zero−drift architecture enables

文件：740.33 Kbytes 页数：18 Pages

ONSEMI

安森美半导体

丝印：CQ；Package：SOD123F；Single Zener diodes

1.1 General description General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features 1.3 Applications General regulation functions Total power dissipation: ≤ 500 mW Small plastic package suitable for surface-mounted design Wid

文件：205.16 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：CQ；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

文件：1.00428 Mbytes 页数：4 Pages

SUNMATE

森美特