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CPC5603

N Channel Depletion Mode FET

Description The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical

文件:85.31 Kbytes 页数:3 Pages

Clare

Clare, Inc.

CPC5603

N-Channel Depletion Mode FET

文件:111.86 Kbytes 页数:5 Pages

Clare

Clare, Inc.

CPC5603

N-Channel Depletion Mode FET

文件:112.58 Kbytes 页数:5 Pages

IXYS

艾赛斯

CPC5603

电信集成电路

·VDSS: 100V - 1700V\n·Avalanche energy rated\n·ID25: 0.1A - 20A\n·Ultra-low Rds(on) - 330 milliohms\n·Remain ON at or above zero Gate Voltage;

Littelfuse

力特

CPC5603C

N Channel Depletion Mode FET

Description The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical

文件:85.31 Kbytes 页数:3 Pages

Clare

Clare, Inc.

CPC5603C

N Channel Depletion Mode FET

Description The CPC5603C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertica

文件:248.67 Kbytes 页数:3 Pages

Clare

Clare, Inc.

CPC5603CTR

N Channel Depletion Mode FET

Description The CPC5603C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertica

文件:248.67 Kbytes 页数:3 Pages

Clare

Clare, Inc.

CPC5603CTR

N Channel Depletion Mode FET

Description The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical

文件:85.31 Kbytes 页数:3 Pages

Clare

Clare, Inc.

CPC5603_12

N-Channel Depletion Mode FET

文件:111.86 Kbytes 页数:5 Pages

Clare

Clare, Inc.

CPC5603C

N-Channel Depletion Mode FET

文件:111.86 Kbytes 页数:5 Pages

Clare

Clare, Inc.

详细参数

  • 型号:

    CPC5603

  • 制造商:

    CLARE

  • 制造商全称:

    Clare, Inc.

  • 功能描述:

    N-Channel Depletion Mode FET

供应商型号品牌批号封装库存备注价格
CLARE
24+
SOT-223
17
询价
CLARE
17+
SOT-223
6200
询价
CENTRAL
24+
SOT-223
5000
只做原装公司现货
询价
IXYS
24+
SMD
5500
长期供应原装现货实单可谈
询价
IXYS
N/A
SOT-223
9000
原装正品,诚信经营
询价
CLARE
20+
SOT223
11520
特价全新原装公司现货
询价
CLARE
25+
SOT223
18000
全新原装现货,假一赔十
询价
CLARE
10+PBF
SOT-223
3300
普通
询价
IXYS
1931+
N/A
1154
加我qq或微信,了解更多详细信息,体验一站式购物
询价
CLARE
2447
SOP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多CPC5603供应商 更新时间2025-12-10 16:30:00