CPC5603C中文资料CLARE数据手册PDF规格书

Description

The CPC5603C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telecommunications.

Features

• Low on resistance 8 ohms

• Breakdown voltage 415V minimum

• High input impedance

• Low input and output leakage

• Small package size SOT-223

• PC Card (PCMCIA) Compatible

• PCB Space and Cost Savings

Applications

• Support Component for LITELINK™ Data Access Arrangement (DAA)

• Telecom