Depletion Mode FET

文件：131.12 Kbytes 页数：6 Pages

IXYS

艾赛斯

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤12mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operatio

文件：339.26 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

文件：336.62 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A)

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Comput

文件：138.88 Kbytes 页数：10 Pages

IRF