Power Transistor PNP - Darlington Chip

PROCESS DETAILS Process EPITAXIAL BASE Die Size 195 X 195 MILS Die Thickness 12 MILS Base Bonding Pad Area 29 X 29 MILS Emitter Bonding Pad Area 61 X 35 MILS Top Side Metalization AI - 30,000Å Back Side Metalization Ti/Ni/Au - 6,000Å

文件：206.66 Kbytes 页数：2 Pages

CENTRAL

Power Transistor PNP - Darlington Chip

Central

NPN general purpose transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: JC556, JC557 and JC558. FEATURES • Low current max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers

文件：46.19 Kbytes 页数：8 Pages

PHI

PHI

NPN general purpose transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: JC556, JC557 and JC558. FEATURES • Low current max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers

文件：46.19 Kbytes 页数：8 Pages

PHI

PHI

NPN general purpose transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: JC556, JC557 and JC558. FEATURES • Low current max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers

文件：46.19 Kbytes 页数：8 Pages

PHI

PHI