零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
OutgassingCompliantChipInductors | COILCRAFTCoilcraft 线艺 | COILCRAFT | ||
LatchTypeHallSensor | AHNJNANJING AH ELECTRONICS CO., LTD AH电子南京AH电子科技有限公司 | AHNJ | ||
WIFIAntenna | MASWELLSuzhou Maswell Communication Technology Co. Ltd 迈斯维苏州迈斯维通信技术有限公司 | MASWELL | ||
InitializationoftheST9 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
P-ChannelMOSFET ■Features ●VDS(V)=-40V ●ID=-12A(VGS=-10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD413usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications.StandardProductAOD413isPb-free(meets | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
P-ChannelEnhancementModeMOSFETl Features Vos=-40VID=-30A ROS(ON) | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | TECHPUBLIC | ||
iscP-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=-12A@TC=25℃ •DrainSourceVoltage- :VDSS=-40V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max) •100avalanchetested •MinimumLot-to-Lo | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
40VP-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD413AusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications. Features VDS(V)=-40V ID=-12A(VGS | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD413usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications.StandardProductAOD413isPb-free(meets | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD413YusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications.StandardproductAOD413YisPbfree,ins | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=-12A@TC=25℃ ·DrainSourceVoltage :VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=44mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD413YusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications.StandardproductAOD413YisPbfree,ins | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=-45A@TC=25℃ ·DrainSourceVoltage :VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
P-Channel40V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
P-Channel40V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
P-Channel40V(D-S)MOSFET FEATURES •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=-12A@TC=25℃ ·DrainSourceVoltage :VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=45mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
台湾宝工 |
21+ |
NA |
4600 |
中国航天工业部战略合作伙伴行业领导者 |
询价 | ||
CREE LED |
60000 |
询价 | |||||
CREEINC |
2020+ |
ThroughHole |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
CREE-科锐 |
24+25+/26+27+ |
车规-LED发射 |
63528 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
CREEINC |
21+ROHS |
ThroughHole |
73556 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
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