STD888

iscSiliconPNPPowerTransistor

DESCRIPTION •LowCollector-EmitterSaturationVoltage-:VCE(sat)=-0.7V(Max)(IC=-5A;IB=-0.25A) •DCCurrentGain-hFE=150(Min)@IC=-0.5A •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Poweramplifierapplications •Voltageregulat

STD888

HIGHCURRENT,HIGHPERFORMANCE,LOWVOLTAGEPNPTRANSISTOR

DESCRIPTION TheUTCSTD888isahighcurrent,highperformance,lowvoltagePNPtransistor;itusesUTC’sadvancedtechnologytoprovidecustomershighDCcurrentgainandverylowsaturationvoltage. TheUTCSTD888issuitableforswitchingregulatorinbatterychargerapplications,heavyload

STN888

HIGHCURRENT,HIGHPERFORMANCE,LOWVOLTAGEPNPTRANSISTOR

Description ThedeviceismanufacturedinlowvoltagePNPPlanarTechnologybyusinga“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■VERYLOWCOLLECTORTOEMITTERSATURATIONVOLTAGE ■D.C.CURRENTGAI

TLE888

FlexibleLINalternatorregulatorICfamily

TLE888X

FlexibleLINalternatorregulatorICfamily

TLV888

TLVx888Low-Noise,Zero-Drift,Wide-Bandwidth,Mux-Friendly,OperationalAmplifiers

1Features •Highdcprecision: –Zerodrift:0.01μV/°C –Lowoffsetvoltage:3μV –HighPSRR:150dB –HighCMRR:150dB •Excellentacperformance: –Gainbandwidth:14MHz –Slewrate:40V/μs –Lownoise:7.5nV/√Hz •Inputtothenegativerail,rail-to-railoutput •Lowquiescentcurren

TLVX888

TLVx888Low-Noise,Zero-Drift,Wide-Bandwidth,Mux-Friendly,OperationalAmplifiers

1Features •Highdcprecision: –Zerodrift:0.01μV/°C –Lowoffsetvoltage:3μV –HighPSRR:150dB –HighCMRR:150dB •Excellentacperformance: –Gainbandwidth:14MHz –Slewrate:40V/μs –Lownoise:7.5nV/√Hz •Inputtothenegativerail,rail-to-railoutput •Lowquiescentcurren

TSC888

Lowcosthigh-sidecurrentsenseamplifier

TSC888AILT

Lowcosthigh-sidecurrentsenseamplifier

TSC888BILT

Lowcosthigh-sidecurrentsenseamplifier