COM Express Carrier Board

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DFI

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NPN - High Voltage Darlington Transistor Chip

PROCESS DETAILS Die Size 39.4 x 39.4 MILS Die Thickness 9.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter Bonding Pad Area 7.9 x 7.9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au-As - 18,000Å

文件：719.12 Kbytes 页数：2 Pages

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ETCList of Unclassifed Manufacturers

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