NPN - High Voltage Darlington Transistor Chip

PROCESS DETAILS Die Size 39.4 x 39.4 MILS Die Thickness 9.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter Bonding Pad Area 7.9 x 7.9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au-As - 18,000Å

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Central

NPN - High Voltage Darlington Transistor Die

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Central

Chip Form: High Voltage Darlington

Central

GERMANIUM PNP TRANSISTORS

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ETCList of Unclassifed Manufacturers

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MAXIMUM RATINGS, ELECTRICAL SPECIFICATIONS

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COTO

Contact Form: 2a Load Voltage: 350V Maximum

CotoMOS® CT331/CS331 The CT331 and CS331 feature current switching capability to 110mA with a low on resistance of 24Ω Maximum. Designed for Security, Measurement and Instrumentation applications the CotoMOS® relay is capable of handling 350V load conditions. If your requirements are different pl

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COTO