MOS

CMOS

场效应

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：815.67 Kbytes 页数：4 Pages

Bychip

百域芯

N-Channel PowerTrench짰 MOSFET 25 V, 8.6 m廓

文件：336.95 Kbytes 页数：7 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=30A@ TC=25℃ ·Drain Source Voltage : VDSS=25V(Min) ·Static Drain-Source On-Resistance : RDS(on) =8.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：331.57 Kbytes 页数：2 Pages

ISC

无锡固电