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CMT06N60N220FP中文资料PDF规格书
CMT06N60N220FP规格书详情
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
FEATURES
◆ Robust High Voltage Termination
◆ Avalanche Energy Specified
◆ Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
◆ Diode is Characterized for Use in Bridge Circuits
◆ IDSS Specified at Elevated Temperature
产品属性
- 型号:
CMT06N60N220FP
- 制造商:
CHAMP
- 制造商全称:
CHAMP
- 功能描述:
POWER FIELD EFFECT TRANSISTOR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
原装正品 |
TO220 |
2200 |
国内领先的集成电路专业配单!量大可发货!可开17%增值 |
询价 | |||
虹冠(台湾) |
23+ |
TO-220/TO-220F |
4000 |
正品原装货价格低qq:2987726803 |
询价 | ||
CMC/虹冠 |
2022 |
TO220 |
5280 |
原厂原装正品,价格超越代理 |
询价 | ||
CET |
24+ |
TO- |
12300 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 | ||
CET/華瑞 |
23+ |
TO- |
10000 |
公司只做原装正品 |
询价 | ||
CET |
22+ |
TO- |
6000 |
十年配单,只做原装 |
询价 | ||
CET |
23+ |
TO- |
6000 |
原装正品,支持实单 |
询价 | ||
VBSEMI |
19+ |
TO- |
29600 |
绝对原装现货,价格优势! |
询价 | ||
CHAMP |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
CMT |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 |