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CMT06N60N220中文资料PDF规格书
CMT06N60N220规格书详情
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
FEATURES
◆ Robust High Voltage Termination
◆ Avalanche Energy Specified
◆ Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
◆ Diode is Characterized for Use in Bridge Circuits
◆ IDSS Specified at Elevated Temperature
产品属性
- 型号:
CMT06N60N220
- 制造商:
CHAMP
- 制造商全称:
CHAMP
- 功能描述:
POWER FIELD EFFECT TRANSISTOR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CMT |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
E |
23+ |
TO- |
6000 |
原装正品,支持实单 |
询价 | ||
VBsemi |
2225+ |
TO220 |
6505 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
CHAMP |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
CHAMPION |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
CMOS |
24+25+/26+27+ |
TO-3P-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
- |
21+ROHS |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
VBsemi |
24+ |
TO220 |
18000 |
原装正品 有挂有货 假一赔十 |
询价 | ||
CET |
24+ |
TO- |
12300 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 | ||
E |
22+ |
TO- |
25000 |
只做原装进口现货,专注配单 |
询价 |