丝印：CMS9926A；Package：SOP-8；Dual N-Channel Enhancement Mode MOSFET

General Description The CMS9926A uses advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a unidirectional or bi-directional load switch. Features RDS(ON)=25mΩ @ VGS=4.5V RDS(ON)=30mΩ @ VGS=2.5V Dual MOSFET in surface mount package. High Density

文件：1.1659 Mbytes 页数：2 Pages

CMOS

场效应

Dual N-Channel MOSFET

Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V.

文件：226.13 Kbytes 页数：4 Pages

TUOFENG

拓锋半导体

MOS

CMOS

场效应

Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V). Features • 6.5 A, 20 V. RDS(ON)= 0.030 Ω@ VGS= 4.5 V

文件：206.65 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

Dual N-Channel 2.5V Specified PowerTrench MOSFET

文件：117.54 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

Dual N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Surface Mount Package. ● Super high dense cell design for low RDS(ON). ● Rugged and reliable.

文件：351.47 Kbytes 页数：5 Pages

SAMHOP

三合微科