35 W; 9.0 - 10.0 GHz; 28 V; GaN MMIC for Radar Power Amplifiers

The CMPA901A035F1 is a fully matched MMIC housed in a thermally enhanced air cavity package. Operating at 28V, the device is capable of 40W of CW output power. The device can also be operated under pulse conditions.\n\nView Live Product Demonstration ·Typical Output Power 40 W\n·Typical Power Gain 23 dB\n·Typical PAE 35%\n·Operation up to 28 V;

MACOM

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：CMPA901A035F DEVELOPMENT BOARD

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35 W, 9.0 - 11.0 GHz, GaN MMIC, Power Amplifier

Description The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC

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M-FLAT

TOSHIBA/东芝

上传：深圳庞田科技有限公司

CMSEMICON/中微9000

上传：深圳市恒凯威科技开发有限公司