CMPA801B030D数据手册MACOM中文资料规格书

描述 Description

Cree’s CMPA801B030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
Features
28 dB Small Signal Gain40 W Typical PSATOperation up to 28 VHigh Breakdown VoltageHigh Temperature OperationSize 0.142 x 0.188 x 0.004 inch