High power C-band MMIC for pulsed radar operation.

The CMPA5259080 is a high power; two-stage MMIC housed in a QFN package. Operating at 40V and at 25°C  case temperature the device achieves over 100W of pulsed output power. The device is designed primarily for use as an output stage for highly integrated AESA radar type architecture with exceptiona ·>48% Typical Power Added Efficiency\n·29 dB Small Signal Gain\n·110 W Typical PSAT\n·Operation up to 40 V\n·High power; pulsed operation; Surface mount package\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

80 W, 5.0 - 5.9 GHz, GaN MMIC, Power Amplifier

Description Cree’s CMPA5259080S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift vel

文件：1.80706 Mbytes 页数：16 Pages

WOLFSPEED

80 W, 5.0 - 5.9 GHz, GaN MMIC, Power Amplifier

文件：1.74131 Mbytes 页数：16 Pages

Cree

科锐

M-FLAT

TOSHIBA/东芝

上传：深圳庞田科技有限公司

CMSEMICON/中微9000

上传：深圳市恒凯威科技开发有限公司