| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-Channel60-V(D-S),175CMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
-50A,-60VP-CHANNEL(D-S)POWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
P-ChEnhancementModePowerMOSFET | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
IscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP50P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=−10V,ID=−25A) RDS(on)2=23mΩMAX.(VGS=−4.5V,ID=−25A) •Lowinputcapacitance | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
P-CHANNELMOSFETinaTO-220PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
N-ChannelEnhancementModePowerMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
P-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
P-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
-60V–-50A–P-channelPowerMOSFETApplication:Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=17mMax.(VGS=-10V,ID=-25A) RDS(on)=23mMax.(VGS=-4.5V,ID=-25A) Lowinputcapacitance:Ciss=50 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP50P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=−10V,ID=−25A) RDS(on)2=23mΩMAX.(VGS=−4.5V,ID=−25A) •Lowinputcapacitance | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
-60V–-50A–P-channelPowerMOSFETApplication:Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=16.5mMax.(VGS=-10V,ID=-25A) RDS(on)=23.0mMax.(VGS=-4.5V,ID=-25A) Lowinputcapacitance:Ciss | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
AutomotiveP-Channel60V(D-S)175째CMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
AutomotiveP-Channel60V(D-S)175째CMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
GlassPassivatedBridgeRectifiers | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
50A,600V-1000VGlassPassivatedBridgeRectifiers | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
GlassPassivatedBridgeRectifiers | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CMOS |
23+ |
TO-220 |
5000 |
原装现货 假一赔十 |
询价 | ||
CMOS |
20+ |
TO-220 |
8699 |
原装现货、工厂库存 |
询价 | ||
Cmos/广东场效应 |
1年内 |
TO-220 |
150000 |
原厂FAE技术支持 共奕芯城一站式电子元器件采购平台支 |
询价 | ||
Cmos |
100000 |
23 |
6000 |
全新、原装 |
询价 | ||
Cmos(广东场效应半导体) |
23+ |
TO220 |
6000 |
询价 | |||
SYNERGY |
2017+ |
SMD |
1585 |
只做原装正品假一赔十! |
询价 | ||
CUI |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
CUI |
22+ |
NA |
6145 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
CEL |
23+ |
sop |
10000 |
现货常备产品原装可到京北通宇商城查价格 |
询价 | ||
23+ |
N/A |
35800 |
正品授权货源可靠 |
询价 |
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