MOS

CMOS

场效应

Silicon N-Channel Power MOSFET

Features： - Fast Switching - LowON Resistance(Rdson≤0.45Ω) - Low Gate Charge (Typical Data:45nC) - Low Reverse transfer capacitances(Typical:23pF) - 100Single Pulse avalanche energy Test

文件：361.81 Kbytes 页数：10 Pages

HUAJING-MICRO

华润微电子

N-Channel MOSFET 500V, 12A, 0.54廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：621.07 Kbytes 页数：9 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =12A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.54Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.34 Kbytes 页数：2 Pages

ISC

无锡固电