CMOS-4

1.5-Micron CMOS-4 and -4A The electrical characteristics of a particular gate array design are determined after evaluation of samples. This section describes the standard characteristics by a series of tables and graphs.

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NEC

瑞萨

CMOS-4

1.5-Micron CMOS-4 and -4A The electrical characteristics of a particular gate array design are determined after evaluation of samples. This section describes the standard characteristics by a series of tables and graphs.

文件：289.53 Kbytes 页数：6 Pages

NEC

瑞萨

1.0-MICRON CMOS GATE ARRAYS

Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications.

文件：741.99 Kbytes 页数：15 Pages

NEC

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1.0-MICRON CMOS GATE ARRAYS

Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications.

文件：741.99 Kbytes 页数：15 Pages

NEC

瑞萨

1.0-MICRON CMOS GATE ARRAYS

Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications.

文件：741.99 Kbytes 页数：15 Pages

NEC

瑞萨

1.0-MICRON CMOS GATE ARRAYS

Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications.

文件：741.99 Kbytes 页数：15 Pages

NEC

瑞萨

SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH2-4L is a high current, low VF silicon Schottky diode in an SOD-523 surface mount package. This device offers a VF as low as 0.33 volts and is designed for small signal general purpose applications where size and low loss is required.

文件：108.3 Kbytes 页数：2 Pages

CENTRAL

ULTRAminiTM SURFACE MOUNT SCHOTTKY DIODES

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-3 type is a Silicon Schottky diode, epoxy molded in an ULTRAmini™ surface mount package, designed for fast switching applications requiring a low forward voltage drop. MARKING CODE: 53

文件：89.8 Kbytes 页数：2 Pages

CENTRAL

SURFACE MOUNT ENHANCED SPECIFICATION SILICON SCHOTTKY DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-4E is an enhanced version of the CMOSH-3 silicon Schottky diode in an SOD-523 surface mount package. MARKING CODE: 4E ENHANCED SPECIFICATIONS: ♦ IF from 100mA MAX to 200mA MAX ♦ BVR from 30V MIN to 40V MIN ♦ VF from 1.0V MAX to 0.8V MAX

文件：124.58 Kbytes 页数：2 Pages

CENTRAL

SURFACE MOUNT ULTRAmini LOW LEVEL SILICON ZENER DIODE 1.8 VOLTS THRU 47 VOLTS

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ1L8 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini™ package, designed for applications requiring an extremely low operating current and low leakage.

文件：111.59 Kbytes 页数：2 Pages

CENTRAL