首页 >CMLT3906ETRPB-FREE>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DualGeneralPurposePNPTransistor DualGeneralPurposePNPTransistor TheFFB3906Ddeviceisspin–offofourpopularSOT–23/SOT–323three–leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT–363six–leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdevi | FS First Silicon Co., Ltd | FS | ||
GeneralPurposeTransistor Feature •General-PurposeTransistor | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
GeneralPurposeTransistor Feature •General-PurposeTransistor | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPMulti-ChipGeneralPurposeAmplifier PNPMulti-ChipGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposeamplifierandswitchingapplicationsatcollectorcurrentsof10µAto100mA.SourcedfromProcess66. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPEPITAXIALPLANARTRANSISTOR Description TheFMBT3906isdesignedforgeneralpurposeswitchingandamplifierapplications. | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA | ||
PNPGeneralPurposeTransistorCollector-EmitterVoltageVCEO-40 PNPGeneralPurposeTransistor | FCIFirst Components International 戈采戈采企业股份有限公司 | FCI | ||
SMDPNPTransistor 200mASiliconPNPEpitaxialPlanarTransistor Features •Highcollector-emitterbreakdienvoltage.(BVCEO=-40V@IC=-1.0mA) •Smallloadswitchtransistorwithhighgainandlowstaurationvoltage,isdesignedforgeneralpurposeamflifierandswitchingapplicationsatcollectorcurrent. •Capa | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA | ||
SOT23PNPSILICONPLANARSWITCHINGTRANSISTORS | Zetex Zetex Semiconductors | Zetex | ||
30VN-ChannelMOSFETs | FS First Silicon Co., Ltd | FS | ||
30VN-ChannelMOSFETs | FS First Silicon Co., Ltd | FS |
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