CMF5N60规格书库存现货场效应CMOS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CMF5N60	文件：300 bytes Page：1 Pages	MOS	CMOS 场效应	CMOS
CMF5N60A	文件：300 bytes Page：1 Pages	MOS	CMOS 场效应	CMOS
FCD5N60	文件：947.92 Kbytes Page：9 Pages	600V N-Channel MOSFET Description SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provi 文件：947.92 Kbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild
FCD5N60	文件：353.35 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 4.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC 文件：353.35 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
FCD5N60TF	文件：947.92 Kbytes Page：9 Pages	600V N-Channel MOSFET Description SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provi 文件：947.92 Kbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild

更多CMF5N60供应商更新时间2025-12-19 11:06:00