DC-18 GHz Low Phase Noise Amplifier

Qorvo's CMD326 is a wideband GaAs MMIC low phase noise amplifier ideally suited for military, space, and communications systems. At 10 GHz, the device delivers 14.4 dB of gain, has a saturated output power of +24.4 dBm, and has a noise figure of 3.5 dB. Also, with an input signal of 6 GHz, the ampli • Wide bandwidth\n• Low phase noise\n• Positive gain slope\n• High output power\n• Small die size;

Qorvo

威讯联合

DC-18 GHz Low Phase Noise Amplifier

文件：315.29 Kbytes 页数：11 Pages

QORVO

威讯联合

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –1.5 A, –20 V. RDS(ON) = 140 mΩ @ VGS = –4.5 V RDS(ON) = 180 mΩ @ VGS =

文件：69.5 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts Minimum Gain = 9.0 dB • Built–In Matching Network for Broadb

文件：107.71 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Silicon P-Channel JFET Transistor General Purpose AF Amplifier

Silicon P–Channel JFET Transistor General Purpose AF Amplifi

文件：21.37 Kbytes 页数：2 Pages

NTE