首页 >CMD04N03A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
OptiMOS짰2Power-Transistor PackageMarking •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS짰2Power-Transistor PackageMarking •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS짰2Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
25VN-ChannelEnhancementModeFieldEffectTransistor FEATURES •RDS(ON),VGS@10V,IDS@30A=4mΩ •RDS(ON),VGS@5.0V,IDS@24A=6mΩ •Advancedtrenchprocesstechnology •HighDensityCellDesignForUitraLowOn-Resistance •SpeciallyDesignedforDC/DCConvertersandMotorDrivers •FullyCharacterizedAvalancheVoltageandCurrent •Incompliance | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT |
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