25V N-Channel Enhancement Mode Field Effect Transistor

FEATURES • RDS(ON),VGS@10V,I DS@30A=4mΩ • RDS(ON),VGS@5.0V,I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • In compliance

文件：254.91 Kbytes 页数：5 Pages

PANJIT

強茂

25V N-Channel Enhancement Mode Field Effect Transistor

Panjit

強茂

N-Channel 30-V (D-S) MOSFET

文件：1.60159 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：1.6019 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：1.60163 Mbytes 页数：7 Pages

VBSEMI

微碧半导体