DL5240B

500mWZenerDiode2.4to75Volts

Features •WideVoltageRangeAvailable •GlassPackage •HighTempSoldering:260°Cfor10SecondsAtTerminals •SurfaceMountPackageMarking:Cathodebanddenotespolarity •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation)

DL5240B

ZENERDIODES

DL5240B

ZENERDIODESVoltage:2.4-56VPeakPulsePower:500mWGlasspassivatedjunction

ZenerVoltage:2.4-56VPeakPulsePower:500mW FEATURE ♦Lowzenerimpedance ♦Lowregulationfactor ♦Glasspassivatedjunction ♦Hightemperaturesolderingguaranteed:260°C/10Satterminals

DL5240-TP

500mWZenerDiode2.4to75Volts

Features •WideVoltageRangeAvailable •GlassPackage •HighTempSoldering:260°Cfor10SecondsAtTerminals •SurfaceMountPackageMarking:Cathodebanddenotespolarity •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation)

DLM5240B

TECHNICALSPECIFICATIONSOFGLASSSILICONZENERDIODES

DLQ5240B

TECHNICALSPECIFICATIONSOFGLASSSILICONZENERDIODES

DS5240

High-SpeedSecureMicrocontroller

DSS5240T

LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR

Features •BVCEO>-40V •IC=-2AHighContinuousCollectorCurrent •ICM=-3APeakPulseCurrent •LowSaturationVoltage-225mVMax@IC=-1A •RCE(SAT)=90mΩat-0.5AforaLowEquivalentOn-Resistance •730mWPowerDissipation •ComplimentaryNPNType:DSS4240T •TotallyLead-Free

DSS5240V

LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable(DSS4240V) •LowCollector-EmitterSaturationVoltage,VCE(SAT) •SurfaceMountPackageSuitedforAutomatedAssembly •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note1) •GreenDevice(Note

DSS5240VQ

40VPNPLOWSATURATIONTRANSISTORINSOT563

Description Thisbipolarjunctiontransistor(BJT)isdesignedtomeetthestringent requirementsofautomotiveapplications. Features •BVCEO>-40V •IC=-1.8AHighContinuousCollectorCurrent •ICM=-3APeakPulseCurrent •LowCollector-EmitterSaturationVoltage •TotallyLead-Fr