MOS

CMOS

场效应

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)1= 17 mΩMAX. (VGS= −10 V, ID= −25 A) RDS(on)2= 23 mΩMAX. (VGS= −4.5 V, ID= −25 A) •Low input capacitance

文件：184.9 Kbytes 页数：7 Pages

NEC

瑞萨

Glass Passivated Bridge Rectifiers

文件：234.96 Kbytes 页数：4 Pages

TSC

台湾半导体

-50A, -60V P-CHANNEL (D-S) POWER MOSFET

文件：144.02 Kbytes 页数：3 Pages

UTC

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