HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IC ….………………….…….. 600 A ● VCES ……………..…...….. 1200 V ● Flat base Type Copper (non-plating) base plate No accessory (terminal screw) attach ● RoHS Directive compliant APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc.

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MITSUBISHI

三菱电机

Single IGBTMOD??A-Series Module 600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connect ed super-fast recovery free-wheel diode. All components and in ter connects are isolated from the heat sinking basepla

文件：238.31 Kbytes 页数：4 Pages

POWEREX

Single IGBTMOD 600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

文件：59.7 Kbytes 页数：4 Pages

POWEREX

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

文件：45.27 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

文件：49.76 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

Single IGBTMOD 600 Amperes/1400 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

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POWEREX

Trench Gate Design Single IGBTMOD??600 Amperes/250 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration, with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate

文件：52.2 Kbytes 页数：4 Pages

POWEREX

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration, with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering s

文件：45.84 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................600A ● VCES ....................................................... 4500V ● Insulated Type ● 1-element in

文件：64.8 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

Single IGBTMOD??HVIGBT 600 Amperes/4500 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified syste

文件：65.54 Kbytes 页数：4 Pages

POWEREX